Study of band nonparabolicity using electron-cyclotron resonance of InGaAs/InAlAs quantum wells below 100 T

被引：2

作者：

Shibata, K

Kotera, N

Arimoto, H

Miura, N

Wang, YJ

Jones, ED

Reno, JL

Washima, M

Mishima, T

机构：

[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 8208502, Japan

[2] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba, Japan

[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32306 USA

[4] Sandia Natl Labs, Albuquerque, NM 87185 USA

[5] Hitachi Cable Ltd, Tsuchiura, Ibaraki, Japan

[6] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期

关键词：

nonparabolicity; cyclotron resonance; quantum wells;

D O I：

10.1016/S1386-9477(01)00473-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nonparabolic tendency of conduction subbands in InGaAs/InAlAs quantum wells (QWS), lattice-matched to InP, were studied using cyclotron resonance (CR) because its confinement potential was stronger than in InGaAs/InP and GaAs/GaAlAs QWs. Thickness of InGaAs well was 5-10 nm. Barrier thickness was more than 10 nm. Field-scanned pulse CR and wavelength-scanned CR were observed. CR energy changed sublinearly with magnetic field. This curve agreed with our calculation, based on Kane's three-level band theory and Landau quantization. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：566 / 569

页数：4

共 16 条

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[16] Study of GaN layer crystallization on GaAs(100) using electron cyclotron resonance or glow discharge N2 plasma sources for the nitriding process
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