Room temperature operated 3.1 μm type-I GaSb-based diode lasers with 80 mW continuous-wave output power

被引：32
|
作者：
Shterengas, L. [1 ]
Belenky, G. [1 ]
Kipshidze, G. [1 ]
Hosoda, T. [1 ]
机构：
[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 17期
关键词：
D O I：
10.1063/1.2919720
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-power diode lasers with heavily strained In(Al)GaAsSb type-I quantum-well active regions emitting at 3.1 mu m at room temperature are reported. The devices produce continuous-wave output powers above 200 mW at 250 K and 80 mW at 285 K. (C) 2008 American Institute of Physics.
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页数：3
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