Room-temperature continuous-wave operation of InGaAsSb/AlGaAsSb quantum-well diode lasers emitting at 2.3μm

被引:0
|
作者
机构
[1] Li, Zhan Guo
[2] You, Ming Hui
[3] Gao, Xin
[4] Liu, Guo Jun
[5] Qiao, Zhong Liang
[6] Li, Lin
[7] Qu, Yi
[8] Bo, Bao Xue
[9] Ma, Xiao Hui
来源
You, Ming Hui | 1600年 / National Institute of Optoelectronics卷 / 08期
关键词
14;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:11 / 12
相关论文
共 50 条
  • [1] Room-temperature continuous-wave operation of InGaAsSb/AlGaAsSb quantum-well diode lasers emitti at 2.3μm
    Li, Zhan Guo
    You, Ming Hui
    Gao, Xin
    Liu, Guojun
    Qiao, Zhong Liang
    Li, Lin
    Qu, Yi
    Bo, Bao Xue
    Ma, Xiao Hui
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (11-12): : 1013 - 1015
  • [2] ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS
    LEE, H
    YORK, PK
    MENNA, RJ
    MARTINELLI, RU
    GARBUZOV, DZ
    NARAYAN, SY
    CONNOLLY, JC
    APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1942 - 1944
  • [3] Low threshold room-temperature continuous-wave operation of 2.24-3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
    Lin, C
    Grau, M
    Dier, O
    Amann, MC
    APPLIED PHYSICS LETTERS, 2004, 84 (25) : 5088 - 5090
  • [4] Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
    Kim, JG
    Shterengas, L
    Martinelli, RU
    Belenky, GL
    Garbuzov, DZ
    Chan, WK
    APPLIED PHYSICS LETTERS, 2002, 81 (17) : 3146 - 3148
  • [5] Analysis of temperature dependence of the threshold current in 2.3-2.6 μm InGaAsSb/AlGaAsSb quantum-well lasers
    Andreev, AD
    Donetsky, DV
    APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2743 - 2745
  • [6] MBE Growth of 2.3μm InGaAsSb/AlGaAsSb Strained Multiple Quantum Well Diode Lasers
    Zhang, Tiancheng
    Ni, Qinfei
    Liu, Xuezhen
    Yu, Bin
    Wang, Yuxia
    Zhang, Yu
    Ma, Xunpeng
    Wang, Yongbin
    Xu, Yun
    ADVANCES IN OPTICS MANUFACTURE, 2013, 552 : 389 - 392
  • [7] Room temperature CW operation of GaInAsSb/AlGaAsSb quantum well lasers emitting in the 2.2 to 2.3 μm wavelength range
    Mermelstein, C
    Simanowski, S
    Mayer, M
    Kiefer, R
    Schmitz, J
    Walther, M
    Wagner, J
    INFRARED APPLICATIONS OF SEMICONDUCTORS III, 2000, 607 : 53 - 58
  • [8] Temperature dependence of continuous wave threshold current for 2.3-2.6 μm InGaAsSb AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers
    Garbuzov, D
    Maiorov, M
    Lee, H
    Khalfin, V
    Martinelli, R
    Connolly, J
    APPLIED PHYSICS LETTERS, 1999, 74 (20) : 2990 - 2992
  • [9] Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density
    Xing Jun-Liang
    Zhang Yu
    Liao Yong-Ping
    Wang Juan
    Xiang Wei
    Xu Ying-Qiang
    Wang Guo-Wei
    Ren Zheng-Wei
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2014, 31 (05)
  • [10] High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers
    徐云
    王永宾
    张宇
    宋国峰
    陈良惠
    Chinese Physics B, 2013, (09) : 443 - 445