Single electron transport through individual InAs quantum dots

被引：0
|
作者：
Schmidt, KH [1 ]
Versen, M [1 ]
Kunze, U [1 ]
Reuter, D [1 ]
Wieck, AD [1 ]
机构：
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Coulomb-blocked electron transport through individual InAs islands embedded in a lithographically defined constriction has been investigated. In contrast to the step like increase of the conductance in a dot-free sample, the characteristic of the point contact devices with dots show well resolved peaks reflecting Coulomb-blocked electron transport through the p-shell of only a view islands. From the gate voltage distance of adjacent tunneling features a Coulomb-Blockade energy of approximate to 10meV could be extracted.
引用
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页码：1087 / 1088
页数：2
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