Single electron transport through site-controlled InAs quantum dots

被引：5
|
作者：
Cha, K. M. [1 ]
Shibata, K. [1 ]
Hirakawa, K. [1 ,2 ,3 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Meguro Ku, Tokyo 1538505, Japan
[3] CREST JST, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期
基金：
日本科学技术振兴机构; 日本学术振兴会;
关键词：
BEAM LITHOGRAPHY; EMISSION; SYSTEM; ISLAND;
D O I：
10.1063/1.4769039
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown site-and size-controlled InAs quantum dots (QDs) in shallow nanoholes prepared using atomic force microscope-assisted anodic nano-oxidation and subsequent etching, and investigated their transport properties by depositing metal nanogap electrodes on a single QD. We have observed clear diamond-like patterns in Coulomb stability diagrams, indicating that the fabricated single QD transistors operate as single electron transistors and that the site-controlled QDs have a good crystalline quality. Furthermore, we show that the charging energies and the orbital quantization energies can be controlled over a wide range by controlling the size of the QDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769039]
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页数：5
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