Site-controlled self-organization of InAs quantum dots

被引：27
|
作者：
Kohmoto, S [1 ]
Nakamura, H [1 ]
Ishikawa, T [1 ]
Nishikawa, S [1 ]
Nishimura, T [1 ]
Asakawa, K [1 ]
机构：
[1] Femtosecond Technol Res Assoc, FESTA, Tsukuba, Ibaraki 3002635, Japan
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 88卷 / 2-3期
关键词：
site control; quantum dots; scanning tunneling microscope (STM); electron beam; self-organization; InAs;
D O I：
10.1016/S0921-5107(01)00889-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In situ site-control techniques for self-organized InAs quantum dots (QDs) have been developed using an electron beam (EB) and a scanning tunneling microscope (STM) probe combined with molecular beam epitaxy. In the in situ EB-assisted process, InAs dots are preferentially formed in shallow, sub-mum-size GaAs holes with the InAs supply. We find that the specific slope of a hole acts as a favorable site for dot formation. In the in situ STM probe-assisted process, the size and pitch of the holes are considerably reduced into nanoscale. InAs QDs are then self-organized only at the hole sites due to strain-induced selective nucleation. Using this process, two- and three-dimensional QD arrays are fabricated with nanometer precision. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：292 / 297
页数：6
相关论文
共 50 条
  • [1] Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
    Kohmoto, S
    Nakamura, H
    Ishikawa, T
    Asakawa, K
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (22) : 3488 - 3490
  • [2] Site-controlled InAs Quantum Dots for Plasmonics
    Hakkarainen, T. V.
    Tommila, J.
    Schramm, A.
    Simonen, J.
    Niemi, T.
    Kontio, J.
    Guina, M.
    [J]. 2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [3] Quantum efficiency and oscillator strength of site-controlled InAs quantum dots
    Albert, F.
    Stobbe, S.
    Schneider, C.
    Heindel, T.
    Reitzenstein, S.
    Hoefling, S.
    Lodahl, P.
    Worschech, L.
    Forchel, A.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (15)
  • [4] Structural analysis of site-controlled InAs/InP quantum dots
    Fain, B.
    Elvira, D.
    Le Gratiet, L.
    Largeau, L.
    Beaudoin, G.
    Troadec, D.
    Abram, I.
    Beveratos, A.
    Robert-Philip, I.
    Patriarche, G.
    Sagnes, I.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 334 (01) : 37 - 39
  • [5] Composition uniformity of site-controlled InAs/GaAs quantum dots
    Biasiol, G.
    Baranwal, V.
    Heun, S.
    Prasciolu, M.
    Tormen, M.
    Locatelli, A.
    Mentes, T. O.
    Nino, M. A.
    Sorba, L.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 176 - 179
  • [6] Site-controlled self-assembled InAs quantum dots grown on GaAs substrates
    Lin, Shih-Yen
    Tseng, Chi-Che
    Chung, Tung-Hsun
    Liao, Wen-Hsuan
    Chen, Shu-Han
    Chyi, Jen-Inn
    [J]. NANOTECHNOLOGY, 2010, 21 (29)
  • [7] Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength
    Maier, S.
    Berschneider, K.
    Steinl, T.
    Forchel, A.
    Hoefling, S.
    Schneider, C.
    Kamp, M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (05)
  • [8] Electrical switching of photoluminescence of single site-controlled InAs quantum dots
    Schramm, A.
    Koski, E.
    Kontio, J. M.
    Tommila, J.
    Hakkarainen, T. V.
    Lupo, D.
    Guina, M.
    [J]. ELECTRONICS LETTERS, 2016, 52 (14) : 1240 - 1241
  • [9] Single electron transport through site-controlled InAs quantum dots
    Cha, K. M.
    Shibata, K.
    Hirakawa, K.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [10] Site-controlled InAs quantum dots regrown on nonlithographically patterned GaAs
    Meneou, K
    Cheng, KY
    Zhang, ZH
    Tsai, CL
    Xu, CF
    Hsieh, KC
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
12345