Single electron transport through individual InAs quantum dots

被引：0
|
作者：
Schmidt, KH [1 ]
Versen, M [1 ]
Kunze, U [1 ]
Reuter, D [1 ]
Wieck, AD [1 ]
机构：
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Coulomb-blocked electron transport through individual InAs islands embedded in a lithographically defined constriction has been investigated. In contrast to the step like increase of the conductance in a dot-free sample, the characteristic of the point contact devices with dots show well resolved peaks reflecting Coulomb-blocked electron transport through the p-shell of only a view islands. From the gate voltage distance of adjacent tunneling features a Coulomb-Blockade energy of approximate to 10meV could be extracted.
引用
收藏
页码：1087 / 1088
页数：2
相关论文
共 50 条
  • [21] Electron microscopy and optical spectroscopy of single InAs/InP quantum dots
    Chithrani, D.
    Perovic, D. D.
    Williams, R. L.
    Lefebvre, J.
    Poole, P. J.
    Aers, G. C.
    [J]. Microscopy of Semiconducting Materials, 2005, 107 : 247 - 250
  • [22] Single electron charging in deterministically positioned InAs/InP quantum dots
    Reimer, M. E.
    Dalacu, D.
    Lapointe, J.
    Poole, P. J.
    Kim, D.
    Aers, G. C.
    McKinnon, W. R.
    Williams, R. L.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (01)
  • [23] Resonant magnetotunneling through individual self-assembled InAs quantum dots
    Thornton, A
    Itskevich, IE
    Ihn, T
    Henini, M
    Moriarty, P
    Nogaret, A
    Beton, PH
    Eaves, L
    Main, PC
    Middleton, JR
    Heath, M
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1997, 21 (02) : 255 - 258
  • [24] Resonant magnetotunneling through individual self-assembled InAs quantum dots
    Itskevich, IE
    Ihn, T
    Thornton, A
    Henini, M
    Foster, TJ
    Moriarty, P
    Nogaret, A
    Beton, PH
    Eaves, L
    Main, PC
    [J]. PHYSICAL REVIEW B, 1996, 54 (23): : 16401 - 16404
  • [25] Electron tunneling through single self-assembled InAs quantum dots coupled to nanogap electrodes
    Shibata, K.
    Jung, M.
    Buizert, C.
    Oiwa, A.
    Hirakawa, K.
    Machida, T.
    Tarucha, S.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 2869 - +
  • [26] Spectroscopy of single InAs quantum dots
    Gaisler A.V.
    Jaroshevich A.S.
    Derebezov I.A.
    Kalagin A.K.
    Bakarov A.K.
    Toropov A.I.
    Shcheglov D.V.
    Gaisler V.A.
    Latyshev A.V.
    Aseev A.L.
    [J]. Optoelectronics, Instrumentation and Data Processing, 2013, 49 (05) : 498 - 503
  • [27] Electron transport through the electromechanical quantum dots devices
    Wang, Y
    Jiang, JF
    Cai, QY
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 31 (02): : 196 - 199
  • [28] Transient effects in electron transport through quantum dots
    Wiertel, Malgorzata
    Parafiniuk, Piotr
    Taranko, Ryszard
    [J]. OPTICA APPLICATA, 2009, 39 (04) : 959 - 965
  • [29] Spin effects in single-electron transport through carbon nanotube quantum dots
    Moriyama, Satoshi
    Fuse, Tomoko
    Yamaguchi, Tomohiro
    Ishibashi, Koji
    [J]. PHYSICAL REVIEW B, 2007, 76 (04):
  • [30] Single electron transistors using single self-assembled InAs quantum dots
    Jung, M
    Sekine, N
    Hirakawa, K
    Ishida, S
    Arakawa, Y
    Kawaguchi, Y
    Komiyama, S
    [J]. COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, 2005, 184 : 31 - 34
12345