Reduction of thermal conductivity in phononic nanomesh structures

被引:597
|
作者
Yu, Jen-Kan [1 ]
Mitrovic, Slobodan [1 ]
Tham, Douglas [1 ]
Varghese, Joseph [1 ]
Heath, James R. [1 ]
机构
[1] CALTECH, Div Chem & Chem Engn, Pasadena, CA 91125 USA
基金
美国国家科学基金会;
关键词
THERMOELECTRIC-MATERIALS; SILICON NANOWIRES; NANOSTRUCTURES; SUPERLATTICES; PERFORMANCE; TRANSPORT; DEVICES; MERIT;
D O I
10.1038/nnano.2010.149
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications(1,2) and in the cooling of integrated circuits(3). In principle, the thermal conductivity kappa and the electrical conductivity sigma may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so kappa generally decreases as the surface-to-volume ratio increases. In contrast, sigma is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces(4). Here, we demonstrate an approach to independently controlling kappa based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity.
引用
收藏
页码:718 / 721
页数:4
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