Pearson effective potential vs. multi-subband Monte-Carlo simulation for electron transport in DG nMOSFETs

被引：1
|
作者：
Jaud, M. -A. [1 ]
Barraud, S. [1 ]
Saint-Martin, J. [2 ]
Bournel, A. [2 ]
Dollfus, P. [2 ]
Jaouen, H. [3 ]
机构：
[1] CEA LETI, MINATEC, 17 Rue Martyrs, F-38054 Grenoble 9, France
[2] Ctr Univ Paris Sud, CNRS, Inst Electron Fondamentale, Orsay 91405, France
[3] STMicroelectron, Crolles 38926, France
来源：
SISPAD 2007: SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2007 | 2007年
关键词：
D O I：
10.1007/978-3-211-72861-1_16
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a comparison between two-different approaches to including quantum effects in a Monte-Carlo simulator. The ability of our original Pearson Effective Potential (PEP) correction to correctly account for electrostatic quantum effects has been demonstrated on double-gate nMOS capacitors with different film thicknesses. In this work, results obtained from semi-classical, PEP corrected and multi-subband Monte-Carlo approaches are reported for a double-gate nMOSFET with a channel length L-C = 20 nm and a silicon film thickness T-Si = 8 nm at low and high drain voltages. For the first time, excellent agreements are obtained between quantum corrected and multi-subband Monte-Carlo methods on both electrical characteristics and microscopic quantities.
引用
收藏
页码：65 / +
页数：2
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