Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond

被引：16
|
作者：
Sampedro, C. [1 ]
Gamiz, F. [1 ]
Godoy, A. [1 ]
Valin, R. [2 ]
Garcia-Loureiro, A. [2 ]
Rodriguez, N. [1 ]
Tienda-Luna, I. M. [1 ]
Martinez-Carricondo, F. [1 ]
Biel, B. [1 ]
机构：
[1] Univ Granada, Dept Elect, Nanoelect Res Grp, E-18071 Granada, Spain
[2] Univ Santiago de Compostela, Dept Elect & Computac, Santiago De Compostela, Spain
来源：
SOLID-STATE ELECTRONICS | 2011年 / 65-66卷
关键词：
Multi-Subband; Ensemble Monte Carlo; Nanodevices; Bulk nMOSFET; SGSOI; ELECTRON-TRANSPORT; INVERSION-LAYERS; MOBILITY; TRANSISTORS;
D O I：
10.1016/j.sse.2011.06.036
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
With the 32 nm node in mass production, simulation tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Ensemble Monte Carlo (MSB-EMC) approach constitutes today's most accurate method for the study of nanodevices with important applications to SOI devices. However, the study of bulk devices with MSB-EMC codes presents practical limitations arising from the device geometry and the existence of a semi-infinite quantum well. This work presents a in-depth study of such issues to properly apply the Multi-Subband approach to bulk devices. The developed simulator has been used to study bulk-nMOSFETs for the 32 nm technological node and beyond which still constitutes the mainstream technology in commercial ICs and to compare them to their SOI counterparts. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：88 / 93
页数：6
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