Nanocrystalline indium oxide-doped tin oxide thin film as low temperature hydrogen sensor

被引：185

作者：

Shukla, S

Seal, S

Ludwig, L

Parish, C

机构：

[1] Univ Cent Florida, Dept Mech Mat Aerosp Engn, Orlando, FL 32816 USA

[2] Univ Cent Florida, AMPAC, Orlando, FL 32816 USA

[3] NASA, Kennedy Space Ctr, Titusville, FL USA

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 97卷 / 2-3期

基金：

美国国家航空航天局; 美国国家科学基金会;

关键词：

nanocrystalline indium oxide-doped tin oxide; Pt-sputtered thin film; low temperature hydrogen sensor;

D O I：

10.1016/j.snb.2003.08.025

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Hydrogen gas, within the concentration range of 100 ppm-4 vol.%, is successfully sensed at lower operating temperatures, 25 and 50degreesC, using the Pt-sputtered sol-gel dip-coated nanocrystalline (6-7 nm) 6.5 mol% In2O3-doped SnO2 semiconductor thin (100-150 nm) film sensor. Typically, for 1000 ppm of hydrogen, the maximum sensitivity values of 32 and 1600% are observed at 25 and 50degreesC, respectively; while for 2 vol.% hydrogen, the maximum sensitivity values of 50 and 70,000% are recorded at 25 and 50degreesC, respectively. At 25degreesC, for 4 vol.% (explosive limit as set by NASA) hydrogen, the maximum hydrogen gas sensitivity values of 107,887 and 2083% are observed for the Pt-sputtered thin films calcined at 500 and 600degreesC, respectively. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：256 / 265

页数：10

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