PREDICTION OF NBTI DEGRADATION FOR CIRCUIT UNDER AC OPERATION

被引：16

作者：

Tsai, Y. S. ^{[1
]}

Jha, N. K. ^{[1
]}

Lee, Y. -H. ^{[1
]}

Ranjan, R. ^{[1
]}

Wang, Wayne ^{[1
]}

Shih, J. R. ^{[1
]}

Chen, M. J. ^{[1
]}

Lee, J. H. ^{[1
]}

Wu, K. ^{[1
]}

机构：

[1] TSMC, Technol Q&R Div, 9,Creat Rd 1,Hsinchu Sci Pk, Hsinchu 30077, Taiwan

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

D O I：

10.1109/IRPS.2010.5488752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model predicting the negative bias temperature instability ( NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be major factor for AC NBTI degradation. An AC/DC NBTI improvement factor of around 10 has been observed at low frequency of 0.01Hz while it is significantly larger (similar to 10000) at 1GHz frequency range. It is established that the measurement techniques are very crucial for accurate NBTI reliability estimation.

引用

页码：665 / 669

页数：5

共 50 条

[41] Degradation of SiC MOSFETs with Gate Oxide Breakdown under Short Circuit and High Temperature Operation
Mulpuri, Vamsi
Choi, Seungdeog
2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 2527 - 2532
[42] A study on the operation characteristics of main circuit breaker for AC EMU
Kim S.-H.
Kim C.-S.
Kim J.-M.
Transactions of the Korean Institute of Electrical Engineers, 2019, 68 (11): : 1477 - 1481
[43] Investigation of NBTI Degradation on power VDMOS Transistors under Magnetic Field
Tahi, Hakim
Benmessai, Karim
Le Floch, Jean Michel
Boubaaya, Mohamed
Tahanout, Cherifa
Djezzar, Boualem
Benabdelmomene, Abdelmadjid
Goudjil, Mohamed
Chenouf, Amel
2014 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IIRW), 2014, : 139 - 142
[44] A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency Scaling
Parihar, Narendra
Goel, Nilesh
Chaudhary, Ankush
Mahapatra, Souvik
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (03) : 946 - 953
[45] Node criticality computation for circuit timing analysis and optimization under NBTI effect
Wang, Wenping
Yang, Shengqi
Cao, Yu
ISQED 2008: PROCEEDINGS OF THE NINTH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, 2008, : 763 - +
[46] NBTI SUPERCONDUCTING WIRES FOR AC USE
OHMATSU, K
TAKEI, H
TATEISHI, H
ONISHI, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 1539 - 1540
[47] AC susceptibility in NbTi multifilamentary wires
Akune, T
Maeda, R
Sakamoto, N
Takeo, M
PHYSICA B, 2000, 284 : 2095 - 2096
[48] NBTI degradation: A problem or a scare?
21ST INTERNATIONAL CONFERENCE ON VLSI DESIGN: HELD JOINTLY WITH THE 7TH INTERNATIONAL CONFERENCE ON EMBEDDED SYSTEMS, PROCEEDINGS, 2008, : 137 - 142
[49] On the Nature of "Permanent" Degradation in NBTI
Nguyen, D. D.
Kouhestani, C.
Kambour, K. E.
Devine, R. A. B.
2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), 2013, : 150 - 153
[50] Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress
Cao Yan-Rong
He Wen-Long
Cao Cheng
Yang Yi
Zheng Xue-Feng
Ma Xiao-Hua
Hao Yue
CHINESE PHYSICS B, 2014, 23 (11)

← 1 2 3 4 5 →