PREDICTION OF NBTI DEGRADATION FOR CIRCUIT UNDER AC OPERATION

被引：16

作者：

Tsai, Y. S. ^{[1
]}

Jha, N. K. ^{[1
]}

Lee, Y. -H. ^{[1
]}

Ranjan, R. ^{[1
]}

Wang, Wayne ^{[1
]}

Shih, J. R. ^{[1
]}

Chen, M. J. ^{[1
]}

Lee, J. H. ^{[1
]}

Wu, K. ^{[1
]}

机构：

[1] TSMC, Technol Q&R Div, 9,Creat Rd 1,Hsinchu Sci Pk, Hsinchu 30077, Taiwan

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

D O I：

10.1109/IRPS.2010.5488752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model predicting the negative bias temperature instability ( NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be major factor for AC NBTI degradation. An AC/DC NBTI improvement factor of around 10 has been observed at low frequency of 0.01Hz while it is significantly larger (similar to 10000) at 1GHz frequency range. It is established that the measurement techniques are very crucial for accurate NBTI reliability estimation.

引用

页码：665 / 669

页数：5

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