A new physics-based circuit model for 4H-SiC power diodes implemented in SABER

A circuit-oriented model for 4H-SiC power diodes is presented. The modeling technique used in this work was previously applied to a silicon (Si) power diode model for both turn-on and turn-off transients, and presents a good trade-off between accuracy and speed. The model is physics-based, but includes judicious approximations for fast calculation, and includes up-to-date physical models for silicon carbide, with temperature dependence. The proposed model is practically implemented in the circuit simulator SABER, using the MAST modeling language. Model performances are compared to measurements on 2.5 kV 400 A Si IGBT/SiC diode modules from ABB at various input currents.