Germanium electrodeposition into porous silicon for silicon-germanium alloying

被引：5
|
作者：
Grevtsov, Nikita [1 ]
Chubenko, Eugene [1 ]
Bondarenko, Vitaly [1 ]
Gavrilin, Ilya [2 ]
Dronov, Alexey [2 ]
Gavrilov, Sergey [2 ]
机构：
[1] Belarusian State Univ Informat & Radioelect, Minsk, BELARUS
[2] Natl Res Univ Elect Technol, Zelenograd, Moscow, Russia
来源：
MATERIALIA | 2022年 / 26卷
基金：
俄罗斯科学基金会;
关键词：
Electrodeposition; Porous silicon; Germanium; Silicon-germanium alloys; IONIC LIQUID; HYDROGEN; DEPOSITION; TEMPERATURE;
D O I：
10.1016/j.mtla.2022.101558
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method of germanium electrodeposition from a GeO2-based aqueous solution into the pore channels of anodic mesoporous silicon formed on n-type highly-doped (100) silicon wafers is described. The effect of deposition time, pore channel shape and preconditioning of porous silicon layers in hydrofluoric acid is evaluated. Recom-mendations are given in regards to the optimal parameter combinations to ensure uniform pore channel filling with germanium. The possibility of producing silicon-germanium alloys by subsequent rapid heat treatment of the germanium-filled porous silicon layers is established.
引用
收藏
页数：8
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