Structural, electrical and optical properties of sol-gel derived yttrium doped ZnO films

被引：41
|
作者：
Kaur, R [1 ]
Singh, AV [1 ]
Mehra, RM [1 ]
机构：
[1] Univ Delhi, Dept Elect Sci, New Delhi 110021, India
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 06期
关键词：
D O I：
10.1002/pssa.200420006
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Undoped and yttrium doped zinc oxide thin films have been deposited on coming glass by dip coating technique. The effect of doping (0 - 4 wt%) and annealing temperature (300 - 500 degrees C) on the structural, optical and electrical properties of the produced films have been investigated. All the films show polycrystalline nature at an annealing temperature of 350 degrees C. The preferential c-axis growth with lowest full width at half maximum of (002) reflection peak is seen only up to an optimum annealing temperature. A blue shift in the absorption edge is observed both, with increase in dopant concentration and annealing temperature. The electrical resistivity of the films decreases by doping with yttrium. The lowest resistivity of 3.5 x 10(-7) Omega cm and an average transmittance of 86% in the visible range has been obtained in YZO films doped with 3 wt% of yttrium. and annealed at 450 degrees C. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1053 / 1059
页数：7
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