Electrical and optical properties of Na+-doped ZnO thin films prepared by sol-gel method

被引：0

作者：

Ying-Wei, Li ^{[1
]}

Chun-Fang, Lin ^{[2
]}

Xiao, Zhou ^{[1
]}

Ji, Ma ^{[1
]}

Xing-Wen, Zhu ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci, Shanghai 200072, Peoples R China

[2] Shanghai Inst Mat, Shanghai 200437, Peoples R China

来源：

THIN FILM PHYSICS AND APPLICATIONS, SIXTH INTERNATIONAL CONFERENCE | 2008年 / 6984卷

关键词：

ZnO thin film; Na+ dopant; p-type; sol-gel method; photoluminescence;

D O I：

10.1117/12.792359

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Na+-doped ZnO thin films (Zn1-x,Na-x, x=0-0.20) were prepared on Si < 100 > substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials. The electrical properties, including the conducting type and the carrier concentration, as well as the optical properties of the so-obtained films were investigated by four-point probe van der Pauw method and photoluminescence (PL) spectroscopy. After doping Na+, the conductive type of ZnO films changed to p from n-type, indicating that Na+ can act as an acceptor to occupy the Zn2+ sites in ZnO lattice. The 2 resistivity, Hall mobility, and the hole concentration of the film with x=0.10 were 75.7 Omega center dot cm, 2.1 cm(2)/V s and 2.955 x 10(16)/cm(3), respectively. The PL results showed that there were a narrow near-band-edge (NBE) emission line and a broad deep-level (DL) emission for all the films with and without Na+ dopants. A slight blue-shift from about 383nm to 380nm of NBE line was observed for the films after doping Na+.

引用

页数：4

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