Theoretical investigation of inductively coupled CF4 discharges

被引:8
|
作者
Kim, S. S. [2 ]
Choe, Hee Hwan [1 ]
Yoon, Nam-Sik [3 ]
机构
[1] Korea Aerospace Univ, Sch Elect Telecommun & Comp Engn, Gyeonggi 412791, South Korea
[2] Natl Fus Res Ctr, Taejon 305333, South Korea
[3] Chungbuk Natl Univ, Grad Sch, Dept Elect Engn, Chungbuk 361763, South Korea
关键词
ICP; EEDF; heating; collisionality; CF4;
D O I
10.3938/jkps.52.300
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A theoretical study is made of the effects of process conditions, such as the wave frequency, the gas pressure and the magnetic field, on inductively coupled CF4 discharges. A 0-dimensional model and Fokker-Planck approach are utilized for the investigation. Complex reactions involved in the CF4 discharges and non-local electron heating effects in the inductive discharges are considered in the calculation. The consequences of variations in the external parameter for radical formation and electron heating characteristics are analyzed. The radical composition affecting etching selectivity is shown to be dominantly governed by the absorbed power, and the low energy electron heating is shown to be enhanced in collisional region.
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页码:300 / 307
页数:8
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