Temperature-dependent characteristics of cylindrical gate-all-around twin silicon nanowire MOSFETs (TSNWFETs)

The characteristics of cylindrical gate-all-around twin silicon nanowire field-effect transistors with a radius of 5 nm have been measured in temperatures T ranging from 4 to 300 K. The T dependence of the off-current suggests that thermal generation in the channel is the main leakage mechanism. The T dependence of the subthreshold swing exhibits no body effects but shows degradations due to slight differences in the threshold voltages and in the body effect constants of the twin nanowires. The T dependence of the peak normalized transconductance g(m)/V-DS gives a clue of 1-D phonon scattering and suggests that surface roughness scattering at the nanowire wall is dominant at low T values.