Er3+ photoluminescence excitation spectra in erbium-doped epitaxial silicon structures

被引：11
|
作者：
Andreev, BA [1 ]
Krasil'nik, ZF
Kryzhkov, DI
Yablonskii, AN
Kuznetsov, VP
Gregorkiewicz, T
Klik, MAJ
机构：
[1] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia
[2] Lobachevskii Nizhni Novgorod State Univ, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
[3] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1012 WX Amsterdam, Netherlands
来源：
PHYSICS OF THE SOLID STATE | 2004年 / 46卷 / 01期
关键词：
D O I：
10.1134/1.1641931
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Excitation spectra of erbium photoluminescence (lambda = 1540 nm) in Si : Er epitaxial structures were studied within a broad pump wavelength range (lambda = 780-1500 nm). Erbium photoluminescence was observed to occur at pump energies substantially less than the silicon band-gap width. Possible mechanisms of erbium ion excitation in this pump radiation energy region are discussed. (C) 2004 MAIK "Nauka / Interperiodica".
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收藏
页码：97 / 100
页数：4
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