Influences of interface roughness scattering on asymmetric and/or steplike current-voltage characteristics of resonant tunneling diodes

被引：2

作者：

Wang, SJ

Lin, JC

Liou, WR

Yeh, ML

Luo, YC

Cheng, CY

机构：

[1] NATL TAIWAN OCEAN UNIV,DEPT ELECT ENGN,CHILUNG,TAIWAN

[2] NAN TAI JR COLL TECHNOL & COMMERCE,DEPT ELECT ENGN,TAINAN,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 07期

关键词：

interface roughness scattering; negative differential resistance; double barrier; resonant tunneling diode; quantum well;

D O I：

10.1143/JJAP.35.3858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of interface roughness (IR) scattering on transmission coefficient and current-voltage (I-V) characteristics of double-barrier resonant tunneling diodes are investigated. Simulation results reveal that asymmetric interface roughness scattering on different interfaces of the heterostructure may result in asymmetric I-V characteristics. In addition, it is suggested that the splitting of subband energy levels inside the quantum well caused by IR with large terraces (greater than or equal to 15 nm) may be one of the causes leading to a steplike I-V curve in the negative differential resistance region.

引用

页码：3858 / 3862

页数：5

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