Effect of Spacer Layers on Current-Voltage Characteristics of Resonant-Tunneling Diode

被引：17

作者：

Remnev, M. A. ^{[1
]}

Kateev, I. Yu. ^{[1
]}

Elesin, V. F. ^{[1
]}

机构：

[1] MEPhI Natl Res Nucl Univ, Moscow 115409, Russia

来源：

SEMICONDUCTORS | 2010年 / 44卷 / 08期

关键词：

THICKNESS; CAPACITANCE; TERAHERTZ;

D O I：

10.1134/S1063782610080142

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using the numerical solution to the Schrodinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current depends periodically on the emitter spacer width. The constructed electron density diagrams showed that the increase in the peak current is associated with the resonant level in the emitter spacer region.

引用

页码：1034 / 1039

页数：6

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