A study of monolithic CMOS pixel sensors back-thinning and their application for a pixel beam telescope

被引：14
|
作者：
Battaglia, Marco [1 ]
Contarato, Devis
Glubilato, Piero
Greiner, Leo
Glesener, Lindsay
Hooberman, Benjamin
机构：
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[3] Sez Padova, Ist Nazl Fis Nucl, Padua, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2007年 / 579卷 / 02期
关键词：
ILC; monolithic pixel sensors;
D O I：
10.1016/j.nima.2007.05.276
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper reports results of a detailed study of charge collection and signal-to-noise performance of CMOS monolithic pixel sensors before and after back-thinning to 50 and 40 mu m. This study shows that neither their noise nor their response to ionising particles has been degraded by the thinning process. The thinned chips have been used to build a pixel beam telescope for the ALS 1.5 GeV e(-) beam test facility. After alignment, an extrapolation resolution better than 9 mu m has been measured for a configuration of four equally spaced pixel detector planes. Published by Elsevier B.V.
引用
收藏
页码：675 / 679
页数：5
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