GaAs/AlGaAs intersubband mid-infrared emitter

被引：0
|
作者：
Strasser, G [1 ]
Gianordoli, S [1 ]
Hvozdara, L [1 ]
Bichl, H [1 ]
Unterrainer, K [1 ]
Gornik, E [1 ]
Kruck, P [1 ]
Helm, M [1 ]
Heyman, JN [1 ]
机构：
[1] TU Wien, Vienna, Austria
来源：
INFRARED APPLICATIONS OF SEMICONDUCTORS II | 1998年 / 484卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report here the growth and characterization of intersubband quantum well structures based on the GaAs/AlGaAs material system, designed to emit radiation at approximately 7 micrometers. We present transport behavior, infrared photocurrent spectra, and electroluminescence data. First attempts to fabricate a laser structure from this devices encountered difficulties with the electrical properties of the AlGaAs waveguide cladding layers. Thus, we present measurements with different waveguide concepts as doped AlAs cladding layers and doped superlattice cladding structures.
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页码：165 / 170
页数：6
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