Reliable strain determination method for InGaAsN/GaAs quantum wells using a simple photoluminescence measurement

被引：4
|
作者：
Kim, NJ [1 ]
Jang, YD
Lee, D
Park, KH
Jeong, WG
Jang, JW
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea
[3] NanoEpi Technol, Suwon, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期
关键词：
D O I：
10.1063/1.1618371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a reliable method for determining the strain in InGaAsN quantum wells. The method uses the fact that the splitting between heavy hole and light hole energy levels depends mostly on the strain. We also found that the strain was largely relaxed in an In0.34Ga0.66As/GaAs quantum well, but recovered when a small amount of nitrogen was added to the In0.34Ga0.66As layer. (C) 2003 American Institute of Physics.
引用
收藏
页码：3114 / 3116
页数：3
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