Reliable strain determination method for InGaAsN/GaAs quantum wells using a simple photoluminescence measurement

被引：4
|
作者：
Kim, NJ [1 ]
Jang, YD
Lee, D
Park, KH
Jeong, WG
Jang, JW
机构：
[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea
[2] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea
[3] NanoEpi Technol, Suwon, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 15期
关键词：
D O I：
10.1063/1.1618371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a reliable method for determining the strain in InGaAsN quantum wells. The method uses the fact that the splitting between heavy hole and light hole energy levels depends mostly on the strain. We also found that the strain was largely relaxed in an In0.34Ga0.66As/GaAs quantum well, but recovered when a small amount of nitrogen was added to the In0.34Ga0.66As layer. (C) 2003 American Institute of Physics.
引用
收藏
页码：3114 / 3116
页数：3
相关论文
共 50 条
  • [31] Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation
    Chen, Jenn-Fang
    Hsiao, Ru-Shang
    Hsieh, Pei-Chen
    Chen, Yu-Chih
    Wang, Jyh-Shyang
    Chi, Jim-Y.
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (07): : 5662 - 5666
  • [32] Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells
    Carrère, H
    Marie, X
    Barrau, J
    Amand, T
    [J]. Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, 2005, 2 (08): : 3023 - 3026
  • [33] Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells
    Chen, JF
    Hsiao, RS
    Hsieh, PC
    Wang, JS
    Chi, JY
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
  • [34] Compositional non-uniformity in CBE grown InGaAsN/GaAs quantum wells
    Gass, MH
    Bullough, TJ
    Papworth, A
    Thomas, S
    Joyce, TB
    Chalker, PR
    Mazzucato, S
    Hepburn, C
    Balkan, N
    [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 225 - 228
  • [35] Evolution of carrier distribution and defects in InGaAsN/GaAs quantum wells with composition fluctuation
    Chen, Jenn-Fang
    Hsiao, Ru-Shang
    Hsieh, Pei-Chen
    Chen, Yu-Chih
    Wang, Jyh-Shyang
    Chi, Jim-Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (07): : 5662 - 5666
  • [36] Optical characterization of InGaAsN/GaAsN/GaAS quantum wells with InGaP cladding layers
    Lu, CR
    Liu, HL
    Lee, JR
    Wu, CH
    Lin, HH
    Sung, LW
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2005, 66 (11) : 2082 - 2085
  • [37] Effect of growth rate on the composition fluctuation of InGaAsN/GaAs single quantum wells
    Chen, J.F.
    Hsiao, R.S.
    Hsieh, P.C.
    Wang, J.S.
    Chi, J.Y.
    [J]. Journal of Applied Physics, 2006, 99 (12):
  • [38] Photoluminescence study of the GaAs barrier effect on GaAs/GaInAs/GaAs quantum wells
    Bardaoui, A.
    Ben Sedrine, N.
    Harmand, J. C.
    Chtourou, R.
    [J]. 2007 ICTON MEDITERRANEAN WINTER CONFERENCE, 2007, : 137 - +
  • [39] Contactless Electroreflectance and Photoluminescence Study of the Sb Surfactant Effects on InGaAsN Multiple Quantum Wells
    Hsu, H. P.
    Huang, J. K.
    Huang, Y. S.
    Lin, D. Y.
    Chen, W. C.
    Su, Y. K.
    [J]. CHINESE JOURNAL OF PHYSICS, 2013, 51 (05) : 1067 - 1074
  • [40] Trions in GaAs quantum wells: Photoluminescence lineshape analysis
    Esser, A
    Runge, E
    Zimmermann, R
    Langbein, W
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 178 (01): : 489 - 494
12345