Experimental study and simulations on two different avalanche modes in trench power MOSFETs

被引：23
|
作者：
Pawel, I.
Siemieniec, R.
Roesch, M.
Hirler, F.
Herzer, R.
机构：
[1] Infineon Technol Austria AG, A-9500 Villach, Austria
[2] SEMIKRON Elekt GmbH & Co, D-90431 Nurnberg, Germany
来源：
IET CIRCUITS DEVICES & SYSTEMS | 2007年 / 1卷 / 05期
关键词：
D O I：
10.1049/iet-cds:20060370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The avalanche behaviour of a new trench power MOSFET was investigated with the help of measurements and electro-thermal device simulation techniques. Two different destruction regimes were identified experimentally: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The corresponding results agreed well with measurements. Furthermore, the simulations qualitatively predicted the experimental results' dependence of avalanche behaviour on design parameters.
引用
收藏
页码：341 / 346
页数：6
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