Non-contact monitoring of electrical characteristics of silicon surface and near-surface region

被引：0

作者：

Roman, P ^{[1
]}

Brubaker, M ^{[1
]}

Staffa, J ^{[1
]}

Kamieniecki, E ^{[1
]}

Ruzyllo, J ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 1998年 / 449卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The SPV-based method of Surface Charge Profiling (SCP) is discussed, and its applications in silicon surface monitoring in IC manufacturing are reviewed. The SCP method shows high sensitivity to changes in the condition of the Si surface (e.g. surface cleaning operations) and a very thin near-surface region (e.g. variations of active dopant concentration near the surface).

引用

页码：250 / 254

页数：5

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