Effect of thickness on the self-positioning of nanostructures

被引:8
|
作者
Nishidate, Y. [1 ]
Nikishkov, G. P. [1 ]
机构
[1] Univ Aizu, Aizu Wakamatsu 9658580, Japan
关键词
D O I
10.1063/1.2795678
中图分类号
O59 [应用物理学];
学科分类号
摘要
Atomic-scale modeling of self-positioning GaAs-InAs nanostructures is performed. Curvature radius values obtained by the atomic-scale finite element method are compared with those obtained by a continuum mechanics solution under plane strain conditions. Atomic-scale modeling and continuum mechanics solution predict the same curvature radius for structures with large thickness. However, atomic-scale modeling shows significant decrease of the curvature radius for structures with thickness less than 40 nm. (C) 2007 American Institute of Physics.
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页数:5
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