Temperature calibration of heated silicon atomic force microscope cantilevers

被引:75
|
作者
Nelson, B. A.
King, W. P. [1 ]
机构
[1] Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
[2] Univ Illinois, Dept Engn Sci & Mech, Urbana, IL 61822 USA
基金
美国国家科学基金会;
关键词
microcantilever; microheater; Raman; thermometry; atomic force microscopy; thermal sensors;
D O I
10.1016/j.sna.2007.06.008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article presents calibration techniques for heated silicon atomic force microscope cantilevers and analyzes the accuracy of these techniques. A calibration methodology using Raman thermometry is presented and validated with heat transfer simulations and experimental measurements. Raman thermometry generates a calibration standard against which other techniques can be compared. Theoretical predictions of the cantilever temperature-dependent electrical properties do not by themselves provide accurate cantilever temperature calibration. Isothermal calibration is also insufficient. The temperature calibrations are stable with storage time and number of heating cycles, although an electrical 'burn-in' period is required to stabilize the cantilever response. These techniques for precise temperature calibration of heatable silicon cantilevers are required for applications where temperature must be carefully controlled, including surface science measurements and nano-manufacturing. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:51 / 59
页数:9
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