Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

被引：7
|
作者：
Evans, CA [1 ]
Jovanovic, VD [1 ]
Indjin, D [1 ]
Ikonic, Z [1 ]
Harrison, P [1 ]
机构：
[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期
关键词：
D O I：
10.1063/1.2067701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The design and simulation of an In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of similar to 20% at 77 K and sufficient gain to achieve room-temperature laser emission at lambda similar to 2.8 mu m. Threshold currents in the range 4-8 kA/cm(2) are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing lambda similar to 3.1 mu m In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade structure presented in the literature. (C) 2005 American Institute of Physics.
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页码：1 / 3
页数：3
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