InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm

被引：87
|
作者：
Revin, D. G. [1 ]
Cockburn, J. W.
Steer, M. J.
Airey, R. J.
Hopkinson, M.
Krysa, A. B.
Wilson, L. R.
Menzel, S.
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7HR, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr III V Technol, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期
关键词：
D O I：
10.1063/1.2431035
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report the realization of short wavelength (3.05 mu m <=lambda <= 3.6 mu m) InP lattice-matched In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade lasers (QCLs). The highest-performance device displays pulsed laser action at wavelengths between 3.4 and 3.6 mu m, for temperatures up to 300 K, with a low temperature (80 K) threshold current density of approximately 2.6 kA/cm(2), and a characteristic temperature of T-0 similar to 130 K. The shortest wavelength QCL (lambda approximate to 3.05 mu m) has a higher threshold current density (similar to 12 kA/cm(2) at T=20 K) and operates in pulsed mode at temperatures up to 110 K. (c) 2007 American Institute of Physics.
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