InGaAs/AlAsSb/InP strain compensated quantum cascade lasers

被引：12
|
作者：
Revin, D. G. [1 ]
Cockburn, J. W.
Steer, M. J.
Airey, R. J.
Hopkinson, M.
Krysa, A. B.
Wilson, L. R.
Menzel, S.
机构：
[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[2] Univ Sheffield, EPSRC Natl Ctr Technol 3 5, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 15期
关键词：
D O I：
10.1063/1.2721125
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors demonstrate the feasibility of strain compensated InGaAs/AlAsSb/InP quantum cascade lasers (QCLs). Three QCL structures have been investigated, having identical design but with different indium fractions in InxGa1-xAs quantum wells: 0.53 (lattice matched reference device), 0.6, and 0.7. All lasers display similar operating characteristics at lambda approximate to 4.1 mu m with no degradation of performance for the strain compensated devices. This strain compensated system is of interest for QCLs at lambda <similar to 3.5 mu m. It provides increased energy separation between the Gamma and X conduction band minima in the quantum wells, thus decreasing carrier leakage from the upper laser levels by intervalley scattering. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers
    Revin, D. M.
    Cockburn, J. W.
    Steer, M. J.
    Zhang, S.
    Wilson, L. R.
    Hopkinson, M.
    Airey, R. J.
    [J]. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 705 - +
  • [2] InGaAs-AlAsSb-InP quantum cascade lasers: Performance and prospects
    Revin, DG
    Wilson, LR
    Zibik, EA
    Green, RP
    Cockburn, JW
    Steer, MJ
    Airey, RJ
    Hopkinson, M
    Offermans, P
    Koenraad, PM
    Wolter, JH
    [J]. 2005 International Conference on Indium Phosphide and Related Materials, 2005, : 76 - 77
  • [3] InGaAs/AlAsSb quantum cascade lasers
    Revin, DG
    Wilson, LR
    Zibik, EA
    Green, RP
    Cockburn, JW
    Steer, MJ
    Airey, RJ
    Hopkinson, M
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 3992 - 3994
  • [4] MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers
    Gutowski, P.
    Sankowska, I.
    Karbownik, P.
    Pierscinska, D.
    Serebrennikova, O.
    Morawiec, M.
    Pruszynska-Karbownik, E.
    Golaszewska-Malec, K.
    Pierscinski, K.
    Muszalski, J.
    Bugajski, M.
    [J]. JOURNAL OF CRYSTAL GROWTH, 2017, 466 : 22 - 29
  • [5] λ∼3.1 μm room temperature InGaAs/AlAsSb/InP quantum cascade lasers
    Zhang, S. Y.
    Revin, D. G.
    Cockburn, J. W.
    Kennedy, K.
    Krysa, A. B.
    Hopkinson, M.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (03)
  • [6] Strain-Compensated InGaAs Terahertz Quantum Cascade Lasers
    Ohtani, Keita
    Beck, Mattias
    Faist, Jerome
    [J]. ACS PHOTONICS, 2016, 3 (12): : 2297 - 2302
  • [7] InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm
    Revin, D. G.
    Cockburn, J. W.
    Steer, M. J.
    Airey, R. J.
    Hopkinson, M.
    Krysa, A. B.
    Wilson, L. R.
    Menzel, S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (02)
  • [8] Strain-compensated InGaAs/InAlAs quantum-cascade lasers
    Liu Feng-Qi
    Wang Zhanguo
    Li Lu
    Wang Lijun
    Liu Junqi
    [J]. 2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, : 835 - 836
  • [9] Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
    Evans, C. A.
    Jovanovic, V. D.
    Indjin, D.
    Ikonic, Z.
    Harrison, P.
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2006, 153 (06): : 287 - 292
  • [10] InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm
    Revin, DG
    Wilson, LR
    Zibik, EA
    Green, RP
    Cockburn, JW
    Steer, MJ
    Airey, RJ
    Hopkinson, M
    Offermans, P
    Koenraad, PM
    Wolter, JH
    [J]. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 2005, : 248 - 250
12345