InGaAs/AlAsSb quantum cascade detectors operating in the near infrared

被引:59
|
作者
Giorgetta, F. R. [1 ]
Baumann, E.
Hofstetter, D.
Manz, C.
Yang, Q.
Koehler, K.
Graf, M.
机构
[1] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
关键词
D O I
10.1063/1.2784289
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report on short-wavelength In0.53Ga0.47As/AlAs0.56Sb0.44 quantum cascade detectors (QCDs). At room temperature, one device detects at 505 meV (2.46 mu m) with a responsivity of 2.57 mA/W, while a second QCD is sensitive at 580 meV (2.14 mu m) with a responsivity of 0.32 mA/W.
引用
收藏
页数:3
相关论文
共 50 条
  • [1] InGaAs/AlAsSb quantum cascade lasers
    Revin, DG
    Wilson, LR
    Zibik, EA
    Green, RP
    Cockburn, JW
    Steer, MJ
    Airey, RJ
    Hopkinson, M
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 3992 - 3994
  • [2] InGaAs/AlAsSb/InP quantum cascade lasers operating at wavelengths close to 3 μm
    Revin, D. G.
    Cockburn, J. W.
    Steer, M. J.
    Airey, R. J.
    Hopkinson, M.
    Krysa, A. B.
    Wilson, L. R.
    Menzel, S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (02)
  • [3] High Operating Temperature Mid-Infrared InGaAs/GaAs Submonolayer Quantum Dot Quantum Cascade Detectors on Silicon
    Guo, Daqian
    Huang, Jian
    Benamara, Mourad
    Mazur, Yuriy I.
    Deng, Zhuo
    Salamo, Gregory J.
    Liu, Huiyun
    Chen, Baile
    Wu, Jiang
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 2023, 59 (02)
  • [4] Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
    Evans, C. A.
    Jovanovic, V. D.
    Indjin, D.
    Ikonic, Z.
    Harrison, P.
    [J]. IEE PROCEEDINGS-OPTOELECTRONICS, 2006, 153 (06): : 287 - 292
  • [5] Waveguide optical losses in InGaAs/AlAsSb quantum cascade laser
    Revin, D. G.
    Cockburn, J. W.
    Menzel, S.
    Yang, Q.
    Manz, C.
    Wagner, J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (04)
  • [6] InGaAs/AlAsSb/InP strain compensated quantum cascade lasers
    Revin, D. G.
    Cockburn, J. W.
    Steer, M. J.
    Airey, R. J.
    Hopkinson, M.
    Krysa, A. B.
    Wilson, L. R.
    Menzel, S.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (15)
  • [7] Room Temperature InGaAs-AlAsSb Quantum Cascade Lasers Operating in 3-4 μm Range
    Revin, D. G.
    Zhang, S. Y.
    Commin, J. P.
    Cockburn, J. W.
    Kennedy, K.
    Krysa, A. B.
    Hopkinson, M.
    [J]. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 844 - +
  • [8] InGaAs-AlAsSb quantum cascade structures emitting at 3.1 μm
    Revin, DG
    Steer, M
    Wilson, LR
    Airey, RJ
    Cockburn, JW
    Zibik, EA
    Green, RP
    [J]. ELECTRONICS LETTERS, 2004, 40 (14) : 874 - 875
  • [9] Short wavelength InGaAs-AlAsSb-InP quantum cascade lasers
    Revin, D. M.
    Cockburn, J. W.
    Steer, M. J.
    Zhang, S.
    Wilson, L. R.
    Hopkinson, M.
    Airey, R. J.
    [J]. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 705 - +
  • [10] InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm
    Revin, DG
    Wilson, LR
    Zibik, EA
    Green, RP
    Cockburn, JW
    Steer, MJ
    Airey, RJ
    Hopkinson, M
    Offermans, P
    Koenraad, PM
    Wolter, JH
    [J]. 2005 Conference on Lasers & Electro-Optics (CLEO), Vols 1-3, 2005, : 248 - 250