Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

被引：7

作者：

Evans, CA ^{[1
]}

Jovanovic, VD ^{[1
]}

Indjin, D ^{[1
]}

Ikonic, Z ^{[1
]}

Harrison, P ^{[1
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 14期

关键词：

D O I：

10.1063/1.2067701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The design and simulation of an In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of similar to 20% at 77 K and sufficient gain to achieve room-temperature laser emission at lambda similar to 2.8 mu m. Threshold currents in the range 4-8 kA/cm(2) are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing lambda similar to 3.1 mu m In0.53Ga0.47As/Al0.56As0.44Sb quantum-cascade structure presented in the literature. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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