Investigation of Low Dose Rate and Bias Conditions on the Total Dose Tolerance of a CMOS Flash-Based FPGA

被引：10

作者：

Rezgui, Sana ^{[1
]}

Wilcox, Edward P. ^{[1
,2
]}

Lee, Poongyeub

Carts, Martin A. ^{[3
]}

Label, Kenneth ^{[4
]}

Victor Nguyen ^{[1
]}

Telecco, Nicola ^{[1
]}

McCollum, John ^{[1
]}

机构：

[1] Microsemi Corp, Mountain View, CA 94043 USA

[2] MEI Technol NASA GSFC, Greenbelt, MD 20771 USA

[3] Radiat Effects & Anal Grp, Greenbelt, MD 20771 USA

[4] NASA GSFC, Greenbelt, MD 20771 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 01期

关键词：

Annealing; CMOS; floating gate devices; low-dose rate tests; reprogrammable flash-based FPGAs; TID; GATE; MEMORIES;

D O I：

10.1109/TNS.2011.2179316

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TID test results of CMOS Flash-based FPGAs in gamma-rays are presented. The use of realistic low dose-rates and oriented bias-conditions are shown to extend the FPGA TID tolerance. Implications to qualification methods and to most of the new CMOS technologies are noted.

引用

页码：134 / 143

页数：10

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