Low Dose-Rate, High Total Dose Set-Up for Rad-Hard CMOS I/O Circuits Testing

被引：0

作者：

Pace, Calogero ^{[1
]}

Fragomeni, Letizia ^{[1
]}

Parlato, Aldo ^{[2
]}

Solano, Andrea ^{[1
]}

Marchese, Nicolo ^{[1
]}

Fiore, Daniela ^{[1
]}

机构：

[1] Univ Calabria, DIMES, Via P Bucci 42C, I-87036 Arcavacata Di Rende, Italy

[2] Univ Palermo, DEIM, Viale Sci Ed 9, I-90128 Palermo, Italy

来源：

APPLICATIONS IN ELECTRONICS PERVADING INDUSTRY, ENVIRONMENT AND SOCIETY, APPLEPIES 2016 | 2018年 / 429卷

基金：

欧盟地平线“2020”;

关键词：

Low dose rate; Rad-hard I/O circuits; Radiation effect; MOS OXIDES;

D O I：

10.1007/978-3-319-55071-8_4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the planning of low dose-rate, high total dose testing campaign for I/O circuits is reported. In particular, the paper describes all development steps, starting from the rad-hard I/O circuits design and the implementation of the test-chip, which is meant to allow comparative testing between rad-hard and standard devices. The designed experimental setup permits in situ measurements, therefore the circuits behavior can be remotely monitored for very long periods. This feature enables low dose-rate testing up to very high dose.

引用

页码：27 / 33

页数：7

共 11 条

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