Electronic transport studies of Ag-doped Bi2Se3 topological insulator

被引:1
|
作者
Sharma, Shailja [1 ]
Kumar, Shiv [2 ]
Kumar, Amit [3 ]
Shimada, Kenya [2 ]
Yadav, C. S. [1 ]
机构
[1] Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175075, Himachal Prades, India
[2] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, 2-313 Kagamiyam, Higashihiroshima 7390046, Japan
[3] Hiroshima Univ, Grad Sch Sci, Kagamiyama 1-3-1, Higashihiroshima 7398526, Japan
关键词
Binding energy - Photoelectron spectroscopy - Selenium compounds - Silver compounds;
D O I
10.1063/5.0102131
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structural, magnetotransport, and angle-resolved photoemission spectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented. Temperature dependent resistivity exhibits metallic behavior with a slope change above 200 K for Ag-doped Bi2Se3. The magnetoresistance shows positive quadratic dependence at low fields satisfying Kohler's rule. Hall resistivity measurement shows that electrons are dominant charge carriers. Furthermore, these results agree well with the ARPES spectra observed at T = 20 K, where the Fermi level lies inside the bulk conduction band. The Dirac point of the topological surface states is shifted toward higher binding energy (& SIM;0.12 eV) for Ag-doped samples as compared to pristine Bi2Se3. Published under an exclusive license by AIP Publishing.
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页数:8
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