Structural and transport properties of iridium-doped Bi2Se3 topological insulator crystals

被引:6
|
作者
Pu, X. Y. [1 ]
Zhao, K. [2 ]
Liu, Y. [1 ]
Wei, Z. T. [1 ,3 ]
Jin, R. [1 ]
Yang, X. S. [1 ]
Zhao, Y. [1 ]
机构
[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Minist Educ, Superconductor & New Energy R&D Ctr, Mail Stop 165, Chengdu 610031, Peoples R China
[2] Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Peoples R China
[3] Southwest Res Inst Appl Magnet, Mianyang 621000, Peoples R China
基金
中国国家自然科学基金;
关键词
Topological insulators; Magnetoresistance; Structural properties; SB2TE3; RAMAN; FILM;
D O I
10.1016/j.jallcom.2016.10.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Iridium doped Bi2Se3 crystals have been prepared by self-flux method. Their crystalline, morphological, Raman spectra, and transport properties were investigated. The obtained crystals have typical topological insulator characteristics. Same layered structure was confirmed for all samples. The lattice parameter c first decreased and then increased with increasing Ir content. All samples showed two characteristic Raman peaks of Bi2Se3 with one of them blue-shifting as the Ir content increased. The magnetoresistance as well as the resistivity increased first and then decreased with increasing Ir content. The doping mechanism was considered that Ir atoms mainly occupied Bi sites when doped content was lower but they tended to intercalate into atomic layers and van der Waals gap at higher doping content. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:272 / 275
页数:4
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