Tuning of Electrical and Magnetic Transport Properties in Bi2Se3 Topological Insulator Crystals Doped with Mn

被引:14
|
作者
Wei, Zhantao [1 ]
Lv, Li [1 ]
Zhang, Min [1 ]
Yang, Xinsheng [1 ]
Zhao, Yong [1 ,2 ]
机构
[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Superconductor & New Energy R&D Ctr SRDC, Minist Educ, Chengdu 610031, Peoples R China
[2] Univ New S Wales, Sch Mat & Engn, Superconduct Res Grp, Sydney, NSW 2052, Australia
基金
中国国家自然科学基金;
关键词
Topological insulator; Transport properties; Shubbiknov-de-Haas oscillations; Bi2Se3; GROWTH;
D O I
10.1007/s10948-015-2965-1
中图分类号
O59 [应用物理学];
学科分类号
摘要
Mn (x) Bi2-x Se-3 crystals were grown by self-flux method and the phase structure, electrical and magnetic transport properties, carrier density, and Hall mobility were studied. Conductivity was modified by Mn at different temperature regions with different mechanisms. Samples containing low concentration of Mn with x a parts per thousand currency sign 0.05 showed metal behavior. It became p-type semiconductor at x = 0.07, where the electrical resistivity abruptly increased and the carrier density suddenly dropped. The nonmetallic behavior may originate from the topological transport properties or the reduction of intrinsic defects. Doping Mn resulted in a paramagnetic behavior and the origin of magnetism may be also related to the exchange interaction between Mn ions. Furthermore, obvious Shubbiknov-de-Haas (SdH) oscillations were only found in sample with x = 0.07.
引用
收藏
页码:2083 / 2088
页数:6
相关论文
共 50 条
  • [1] Tuning of Electrical and Magnetic Transport Properties in Bi2Se3 Topological Insulator Crystals Doped with Mn
    Zhantao Wei
    Li Lv
    Min Zhang
    Xinsheng Yang
    Yong Zhao
    Journal of Superconductivity and Novel Magnetism, 2015, 28 : 2083 - 2088
  • [2] Electrical and magnetic transport properties of Co-doped Bi2Se3 topological insulator crystals
    Zhang, Min
    Lv, Li
    Wei, Zhantao
    Yang, Liqin
    Yang, Xinsheng
    Zhao, Yong
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2014, 28 (17):
  • [3] Structural and transport properties of iridium-doped Bi2Se3 topological insulator crystals
    Pu, X. Y.
    Zhao, K.
    Liu, Y.
    Wei, Z. T.
    Jin, R.
    Yang, X. S.
    Zhao, Y.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 694 : 272 - 275
  • [4] Growth and magnetic properties of Ni-doped Bi2Se3 topological insulator crystals
    Yang, H.
    Liu, L. G.
    Zhang, M.
    Yang, X. S.
    SOLID STATE COMMUNICATIONS, 2016, 241 : 26 - 31
  • [5] Magnetic Properties of Iron-Doped Bi2Se3, a Topological Insulator
    E. V. Shevchenko
    A. Sh. Khachatryan
    A. O. Antonenko
    E. V. Charnaya
    S. V. Naumov
    V. V. Marchenkov
    V. V. Chistyakov
    M. K. Lee
    L.-J. Chang
    Physics of the Solid State, 2019, 61 : 1037 - 1042
  • [6] Magnetic Properties of Iron-Doped Bi2Se3, a Topological Insulator
    Shevchenko, E. V.
    Khachatryan, A. Sh.
    Antonenko, A. O.
    Charnaya, E. V.
    Naumov, S. V.
    Marchenkov, V. V.
    Chistyakov, V. V.
    Lee, M. K.
    Chang, L. -J.
    PHYSICS OF THE SOLID STATE, 2019, 61 (06) : 1037 - 1042
  • [7] Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals
    Cao, Helin
    Xu, Suyang
    Miotkowski, Ireneusz
    Tian, Jifa
    Pandey, Deepak
    Hasan, M. Zahid
    Chen, Yong P.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (1-2): : 133 - 135
  • [8] Theoretical and experimental investigations on Mn doped Bi2Se3 topological insulator
    Kumar, Ravi
    Banik, Soma
    Sen, Shashwati
    Jha, Shambhu Nath
    Bhattacharyya, Dibyendu
    PHYSICAL REVIEW MATERIALS, 2022, 6 (11)
  • [9] Observation of Kondo behavior in the single crystals of Mn-doped Bi2Se3 topological insulator
    Urkude, R. R.
    Sagdeo, Archna
    Rawat, R.
    Choudhary, R. J.
    Asokan, K.
    Ojha, S.
    Palikundwar, U. A.
    AIP ADVANCES, 2018, 8 (04):
  • [10] High pressure transport properties of the topological insulator Bi2Se3
    Hamlin, J. J.
    Jeffries, J. R.
    Butch, N. P.
    Syers, P.
    Zocco, D. A.
    Weir, S. T.
    Vohra, Y. K.
    Paglione, J.
    Maple, M. B.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (03)