Modeling of breakdown during the post-arc phase of a vacuum circuit breaker

被引:23
|
作者
Sarrailh, P. [1 ,2 ]
Garrigues, L. [1 ,2 ]
Boeuf, J. P. [1 ,2 ]
Hagelaar, G. J. M. [1 ,2 ]
机构
[1] Univ Toulouse, UPS, INPT, LAPLACE Lab Plasma & Convers Energie, F-31062 Toulouse 9, France
[2] CNRS, LAPLACE, F-31062 Toulouse, France
来源
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2010年 / 19卷 / 06期
关键词
FIELD; INTERRUPTION; TEMPERATURE; ELECTRONS; EMISSION; COPPER;
D O I
10.1088/0963-0252/19/6/065020
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
After a high-current interruption in a vacuum circuit breaker (VCB), the electrode gap is filled with a high density copper vapor plasma in a large copper vapor density (similar to 10(22) m(-3)). The copper vapor density is sustained by electrode evaporation. During the post-arc phase, a rapidly increasing voltage is applied to the gap, and a sheath forms and expands, expelling the plasma from the gap when circuit breaking is successful. There is, however, a risk of breakdown during that phase, leading to the failure of the VCB. Preventing breakdown during the post-arc phase is an important issue for the improvement of VCB reliability. In this paper, we analyze the risk of Townsend breakdown in the high copper vapor density during the post-arc phase using a numerical model that takes into account secondary electron emission, volume ionization, and plasma and neutral transport, for given electrode temperatures. The simulations show that fast neutrals created in the cathode sheath by charge exchange collisions with ions generate a very large secondary electron emission current that can lead to Townsend breakdown. The results also show that the risk of failure of the VCB due to Townsend breakdown strongly depends on the electrode temperatures (which govern the copper vapor density) and becomes important for temperatures greater than 2100 K, which can be reached in vacuum arcs. The simulations also predict that a hotter anode tends to increase the risk of Townsend breakdown.
引用
收藏
页数:9
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