High indium content metamorphic (In,Al)As/(In,Ga)As heterojunction bipolar transistors

被引：0

作者：

Monier, C ^{[1
]}

Sawdai, D ^{[1
]}

Cavus, A ^{[1
]}

Sandhu, R ^{[1
]}

Lange, M ^{[1
]}

Wang, J ^{[1
]}

Yamamoto, J ^{[1
]}

Hsing, R ^{[1
]}

Hayashi, S ^{[1
]}

Noori, A ^{[1
]}

Block, T ^{[1
]}

Goorsky, MS ^{[1
]}

Gutierrez-Aitken, A ^{[1
]}

机构：

[1] Northrop Grumman Space Technol, Redondo Beach, CA USA

来源：

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InxAl1-xAs/InxGa1-xAs heterojunction bipolar transistors (HBTs) with indium. composition ranging from 86 to 100% were grown on InP substrates using strain-relief compositionally graded InxAl1-xAs buffers. Lattice-matched In0.86Al0.14As/In0.86Ga0.14As, single and double HBTs with large and small emitter active areas have been successfully fabricated on 6.00 Angstrom graded buffer layers. Despite the use of narrow band gap material system, practical breakdown voltages exceeding 1.5 V have been demonstrated from DHBT structures with high DC gain, reduced leakage at the device junctions and turn-on voltage reduction by a factor of two compared to existing InP bipolar technology.

引用

页码：32 / 35

页数：4

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