Modulation of resistive switching in Pt/LiCoO2/SiO2/Si stacks

被引：4

作者：

Hu, Qi ^{[1
]}

Huang, Anping ^{[1
]}

Zhang, Xinjiang ^{[1
]}

Li, Runmiao ^{[1
]}

Gao, Qin ^{[1
]}

Wang, Meng ^{[1
]}

Wang, Mei ^{[1
]}

Shi, Hongliang ^{[1
]}

Xiao, Zhisong ^{[1
]}

Chu, Paul K. ^{[2
,3
]}

机构：

[1] Beihang Univ, Sch Phys, Beijing 100191, Peoples R China

[2] City Univ Hong Kong, Dept Phys, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China

[3] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Tat Chee Ave, Hong Kong, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 05期

基金：

中国国家自然科学基金;

关键词：

LICOO2; THIN-FILMS; METAL TRANSITION; LITHIUM STORAGE; BATTERIES; DIFFUSION; MEMRISTORS; TRANSPORT; SILICON; SIO2;

D O I：

10.1007/s10854-019-00768-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pt/LiCoO2/SiO2/Si stacks are fabricated by pulsed laser deposition and annealed at different annealing temperature. Pt/LiCoO2/SiO2/Si stacks exhibit lower current and higher high resistance state/low resistance state ratio than other stacks with homogeneous resistive switching. It is found that resistive switching behavior of Pt/LiCoO2/SiO2/Si stacks can be modulated by LiCoO2 crystal structures. The Pt/LiCoO2/SiO2/Si stacks with R-3m LiCoO2 phase show larger maximum currents and better state stability than samples with amorphous LiCoO2, and samples with amorphous or R-3m LiCoO2 phase exhibit non-homogeneous or homogeneous resistive switching, respectively. The reasons for the different resistive switching behaviors are investigated and discussed. These findings provide insights into how to improve the performance of Pt/LiCoO2/SiO2/Si stacks and a further understanding of the homogeneous resistive switching behavior.

引用

页码：4753 / 4759

页数：7

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