Two resistive switching behaviors in Ag/SiO2/Pt memristors

被引：0
|
作者：
Liu, Dongqing [1 ]
Cheng, Haifeng [1 ]
Peng, Renfu [1 ]
Yin, Yimin [1 ]
机构：
[1] Natl Univ Def Technol, Sci & Technol Adv Ceram Fibers & Compos Lab, Changsha 410073, CO, Peoples R China
来源：
2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2016年
关键词：
TRANSITION;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Ag/SiO2/Pt memristors are fabricated to investigate their resistive switching characteristics. The devices exhibit stable and reversible nonvolatile bipolar resistive switching behavior under DC voltage sweeps with a current compliance (CC) of 1 mA. Moreover, electroforming process is not required in the first I-V cycle, the values of VSET and V-RESET are 0.2 V and -0.2 V, respectively. Meanwhile, volatile resistive switching behavior of Ag/SiO2/Pt devices is also obtained under lower CC. The mechanism of two resistive switching behaviors in Ag/SiO2/Pt memristors are analyzed.
引用
收藏
页码：651 / 654
页数：4
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