Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories

被引：87
|
作者：
Gao, S. [1 ]
Chen, C. [1 ]
Zhai, Z. [2 ]
Liu, H. Y. [1 ]
Lin, Y. S. [1 ]
Li, S. Z. [1 ]
Lu, S. H. [1 ]
Wang, G. Y. [1 ]
Song, C. [1 ]
Zeng, F. [1 ]
Pan, F. [1 ]
机构：
[1] Tsinghua Univ, Sch Mat Sci & Engn, Lab Adv Mat MOE, Beijing 100084, Peoples R China
[2] Taiyuan Univ Technol, Dept Met Engn, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 06期
基金：
中国国家自然科学基金;
关键词：
MEMRISTIVE DEVICES; FILAMENT;
D O I：
10.1063/1.4893277
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The Ag/SiO2/indium tin oxide (ITO) devices exhibit bipolar resistive switching with a large memory window of similar to 10(2), satisfactory endurance of >500 cycles, good retention property of >2000 s, and fast operation speed of <100 ns, thus being a type of promising resistive memory. Under slow voltage sweep measurements, conductance plateaus with a conductance value of integer or half-integer multiples of single atomic point contact have been observed, which agree well with the physical phenomenon of conductance quantization. More importantly, the Ag/SiO2/ITO devices exhibit more distinct quantized conductance plateaus under pulse measurements, thereby showing the potential for realizing ultra-high storage density. (c) 2014 AIP Publishing LLC.
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页数：5
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