Conductance modulation in Al/SiO2/n-Si MIS resistive switching structures

被引：1
|
作者：
Wisniewski, Piotr [1 ,2 ]
Jasinski, Jakub [3 ]
Mazurak, Andrzej [3 ]
机构：
[1] Warsaw Univ Technol, Ctr Adv Mat & Technol CEZAMAT, Warsaw, Poland
[2] Polish Acad Sci, Ctr Terahertz Res & Applicat CENTERA, Inst High Pressure Phys, Warsaw, Poland
[3] Warsaw Univ Technol, Inst Microelect & Optoelect, Warsaw, Poland
来源：
2021 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2021年
关键词：
resistive switching; RRAM; MIS structure; silicon oxide; pulse measurements;
D O I：
10.1109/EuroSOI-ULIS53016.2021.9560674
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we discuss the small-signal conductance modulation in the Metal-Insulator-Semiconductor structure. We present the DC measurement results of Al/SiO2/n++-Si device exhibiting resistive switching phenomena. We show that the application of millisecond voltage pulse train results in conductance modulation. Furthermore, we show conductance modulation effect obtained with other bias schemes.
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页数：4
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