Characterization of low-temperature-grown molecular-beam epitaxy GaAs

被引：0
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作者：
Look, DC
机构：
来源：
PROCEEDINGS OF THE TWENTY-FOURTH STATE-OF-THE-ART-PROGRAM ON COMPOUND SEMICONDUCTORS | 1996年 / 96卷 / 02期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Molecular-beam epitaxial GaAs layers grown at substrate temperatures of 200 - 400 degrees C (called LT GaAs) display electrical and optical properties; much different than those of layers grown at the usual temperatures, 580 - 600 degrees C. Specifically, the LT-GaAs point defect concentrations are much higher, and these defects affect conductivity, compensation, and recombination kinetics. Several new or improved devices have emerged as a result of this highly modified material.
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页码：97 / 102
页数：6
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