Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

被引：29
|
作者：
Spirkoska, Dance [1 ,2 ]
Fontcuberta i Morral, Anna [1 ,2 ,3 ]
Dufouleur, Joseph [1 ,2 ]
Xie, Qiushi [1 ,2 ]
Abstreiter, Gerhard [1 ,2 ,4 ]
机构：
[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
[2] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
[3] Ecole Polytech Fed Lausanne, Lab Mat Semicond, Inst Mat, CH-1015 Lausanne, Switzerland
[4] Tech Univ Munich, Inst Adv Study, D-85748 Garching, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2011年 / 5卷 / 09期
关键词：
core-shell nanowires; doping; molecular beam epitaxy; GaAs; AlGaAs; EPITAXIAL-GROWTH; HETEROSTRUCTURES; (110)GAAS; SI;
D O I：
10.1002/pssr.201105338
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：353 / 355
页数：3
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