Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

被引：2

作者：

Tan, Li-Ying ^{[1
]}

Li, Fa-Jun ^{[1
]}

Xie, Xiao-Long ^{[1
]}

Zhou, Yan-Ping ^{[1
]}

Ma, Jing ^{[1
]}

机构：

[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Heilongjiang, Peoples R China

来源：

CHINESE PHYSICS B | 2017年 / 26卷 / 08期

关键词：

radiation effect; lifetime damage coefficient; mobility damage coefficient; radiation damage; QUANTUM-WELLS; IRRADIATION;

D O I：

10.1088/1674-1056/26/8/086202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We demonstrate that the GaAs/AlGaAs nanowires (NWs) ensemble is fabricated into photo-detectors. Current-voltage (I-V) characteristics are measured on GaAs/AlGaAs core-shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 x 10(13) cm(-2) to 5.0 x 10(14) cm(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.

引用

页数：4

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