Proton radiation effect on GaAs/AlGaAs core-shell ensemble nanowires photo-detector

被引：2
|
作者：
Tan, Li-Ying [1 ]
Li, Fa-Jun [1 ]
Xie, Xiao-Long [1 ]
Zhou, Yan-Ping [1 ]
Ma, Jing [1 ]
机构：
[1] Harbin Inst Technol, Natl Key Lab Tunable Laser Technol, Harbin 150001, Heilongjiang, Peoples R China
来源：
CHINESE PHYSICS B | 2017年 / 26卷 / 08期
关键词：
radiation effect; lifetime damage coefficient; mobility damage coefficient; radiation damage; QUANTUM-WELLS; IRRADIATION;
D O I：
10.1088/1674-1056/26/8/086202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate that the GaAs/AlGaAs nanowires (NWs) ensemble is fabricated into photo-detectors. Current-voltage (I-V) characteristics are measured on GaAs/AlGaAs core-shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 x 10(13) cm(-2) to 5.0 x 10(14) cm(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.
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页数：4
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